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參數(shù)資料
| 型號： | CYK512K16SCCAU |
| 英文描述： | Memory |
| 中文描述： | 內(nèi)存 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 174K |
| 代理商： | CYK512K16SCCAU |
ADVANCE
INFORMATION
CYK512K16SCCAU
MoBL3
Document #: 38-05425 Rev. **
Page 3 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied ...........................................–55°C to + 125°C
Supply Voltage to Ground Potential ................ –0.4V to 4.6V
DC Voltage Applied to Outputs
in High Z State
[5, 6, 7]
........................................–0.2V to 3.3V
DC Input Voltage
[5, 6, 7]
.................................... –0.2V to 3.3V
Output Current into Outputs (LOW)............................ 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Device
Range
Industrial
Ambient Temperature
–25°C to +85°C
V
CC
CYK512K16SCCAU
2.70V to 3.30V
Product Portfolio
Product
V
CC
Range (V)
Typ.
[8]
3.0
Speed
(ns)
Power Dissipation
Operating I
CC
(mA)
f = 1MHz
Typ.
[8]
Max.
2
3.5
Standby I
SB2
(
μ
A)
Typ.
[8]
55
f = f
max
Min.
2.70
Max.
3.30
Typ.
[8]
11
Max.
17
Max.
80
CYK512K16SCCAU-70BAI
70
Electrical Characteristics
Over the Operating Range
Parameter
V
CC
V
OH
V
OL
V
IH
V
IL
I
IX
Description
Supply Voltage
Output HIGH Voltage I
OH
= –1.0 mA
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating Supply
Current
Test Conditions
CYK512K16SCCAU-70
Min.
Typ.
[8]
2.7
2.4
Unit
V
V
V
V
V
μ
A
Max.
3.3
I
OL
= 2.0 mA
V
CC
= 2.7V to 3.3V
V
CC
= 2.7V to 3.3V (F = 0)
GND < V
I
< V
CC
0.4
0.8*Vcc
–0.3
–1
V
CC
+ 0.3V
0.4
+1
I
OZ
GND < V
O
< V
CC
, Output Disabled
–1
+1
μ
A
I
CC
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
Vcc = 3.3V
11
2.0
17
3.5
mA
mA
I
SB1
Automatic CE
Power-down
Current — CMOS
Inputs
CE > V
CC
0.2V or CE
2
< 0.2V
V
IN
>V
CC
–0.2V, V
IN
<0.2V)
f = f
MAX
(Address and Data Only),
f = 0 (OE, WE, BHE and BLE),
V
CC
=3.30V
CE > V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.30V
400
μ
A
I
SB2
Automatic CE
Power-down
Current — CMOS
Inputs
Vcc = 3.3V
Vcc = 3.0V
Vcc = 2.8V
55
50
45
80
70
60
μ
A
μ
A
μ
A
Notes:
5. V
IH(MAX)
= V
+ 0.5V for pulse durations less than 20 ns.
6. V
= –0.5V for pulse durations less than 20 ns.
7. Overshoot and undershoot specifications are characterized and are not 100% tested.
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
(typ) and T
A
= 25C.
9. Vcc and Vcc must be at minimal operational levels before inputs are turned ON.
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|---|---|
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