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參數(shù)資料
| 型號(hào)： | CXG1108K |
| 廠商： | Sony Corporation |
| 英文描述： | Power Amplifier Module for JCDMA |
| 中文描述： | 功率放大器模塊JCDMA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | CXG1108K |
– 1 –
E00Y33A25-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXG1108K
8 pin LCC (Ceramic)
Power Amplifier Module for JCDMA
Description
The CXG1108K is the power amplifier module
which operates at a single power supply. This IC is
designed using the Sony’s original p-Gate HFET
process.
Features
Single power supply operation:
V
DD1
= V
DD2
= 3.5V,
V
GG
= 2.95V (@High mode),
V
GG
= 2.7V (@Low mode)
Ultrasmall package: 0.065cc (6.2mm
×
6.2mm
×
1.7mm)
High efficiency:
η
add = 37.5% (@900MHz, P
OUT
= 27dBm)
Output power (high/low mode switching supported):
P
OUT
≤
17dBm: Low mode (V
GG
= 2.7V)
P
OUT
= 17 to 27dBm: High mode (V
GG
2.95V)
Gain: Gp = 26dB (@900MHz)
Applications
Power amplifier for JCDMA system cellular phones
Structure
p-Gate HFET module
Recommended Operating Conditions
V
DD
= 3.3 to 4.2V
V
GG
= 2.95V±1% (High Mode)
2.7V±1% (Low Mode)
Absolute Maximum Ratings
Operating case temperature
Storage temperature
Bias voltage
Bias voltage
Tcase
Tstg
V
DD1
, V
DD2
V
GG
–30 to +85
–30 to +125
6
3.3
(V
DD1
= V
DD2
= 3.5V)
8
°C
°C
V
V
Input power
P
IN
dBm
GaAs module is ESD sensitive devices. Special handling precautions are required.
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