參數(shù)資料
型號(hào): CP2201-GM
廠商: Silicon Laboratories Inc
文件頁數(shù): 81/108頁
文件大?。?/td> 0K
描述: IC ETH CTRLR SNGL-CHIP 28QFN
標(biāo)準(zhǔn)包裝: 73
控制器類型: 以太網(wǎng)控制器,MAC/10Base-T
接口: 并行/串行
電源電壓: 3.1 V ~ 3.6 V
電流 - 電源: 75mA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 28-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 28-QFN(5x5)
包裝: 管件
產(chǎn)品目錄頁面: 627 (CN2011-ZH PDF)
配用: 336-1326-ND - KIT REF DESIGN PWR OVER ETHERNET
336-1316-ND - KIT EVAL FOR CP2201 ETH CTRLR
其它名稱: 336-1313
CP2200/1
74
Rev. 1.0
13.2. Reading the Flash Memory
Flash reads occur much faster than Flash write or erase operations and are completed within the minimum read
strobe time specified by the parallel host interface. Flash is read using the FLASHADDRH:FLASHADDRL,
FLASHDATA, and FLASHAUTORD registers. The FLASHAUTORD register provides an efficient method of
accessing sequential data in Flash by automatically incrementing the Flash address pointer after each read.
13.2.1. Flash Read Procedure
Step 1: Set FLASHADDRH:FLASHADDRL to the address of the byte to be read.
Step 2: Read the value of the byte from FLASHDATA.
13.2.2. Multiple Byte Flash Read Procedure
Step 1: Set FLASHADDRH:FLASHADDRL to the address of the first byte to be read.
Step 2: For each byte, read the value from FLASHAUTORD.
Table 18. Flash Electrical Characteristics
VDD = 3.1 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameters
Conditions
Min
Typ
Max
Units
Flash Size
8192
bytes
Endurance
20k
100k
Erase/
Write
Erase Cycle Time
11
ms
Write Cycle Time
40
55
70
s
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