無錫固電ISC MJE13009三極管

批發(fā)數(shù)量 ≥1000PCS
梯度價格 2.60
型號
MJE13009
品牌
ISC
應(yīng)用范圍
功率
材料
硅(Si)
封裝形式
直插型
集電極最大耗散功率PCM
100
集電極最大允許電流ICM
12
截止頻率fT
4

供應(yīng)MJE13009三極管,TO-220,有意者請聯(lián)系!
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS)= 400V(Min.)
·Collector Saturation Voltage
: VCE(sat)= 1.5 (Max) @ IC= 8.0A
·Switching Time
  : tf= 0.7μs(Max.)@ IC= 8.0A
 
 
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit,  they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
 

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current-Continuous

12

A

ICM

Collector Current-peak

24

A

IB

Base Current

6

A

IBM

Base Current-Peak

12

A

IE

Emitter Current

18

A

IEM

Emitter Current-Peak

36

A

PC

Collector Power Dissipation
TC=25℃

100

W

Ti

Junction Temperature

150


Tstg

StorageTemperature Range

-65~150


ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 10mA; IB= 0

400

 

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A ;IB= 1A

 

 

1.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 8A ;IB= 1.6A
TC= 100℃

 

 

1.5
2.0

V

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 12A ;IB= 3A

 

 

3.0

V

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 5A ;IB= 1A

 

 

1.2

V

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 8A ;IB= 1.6A
TC= 100℃

 

 

1.6
1.5

V

ICEV

Collector Cutoff Current

VCEV= 700V;VBE(off)= 1.5V
TC= 100℃

 

 

1
5

mA

IEBO

Emitter Cutoff Current

VEB= 9V; IC= 0

 

 

1

mA

hFE-1

DC Current Gain

IC= 5A; VCE= 5V

8

 

40

 

hFE-2

DC Current Gain

IC= 8A; VCE= 5V

6

 

30

 

fT

Current-Gain—Bandwidth Product

IC= 0.5 A; VCE= 10V;

4

 

 

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 0.1MHz

 

180

 

pF

Switching Times; Resistive Load

td

Storage Time

IC= 8A; VCC= 125V;
IB1= IB2= 1.6A; tp= 25μs;
Duty Cycle≤1%

 

 

0.1

μs

tr

Fall Time

 

 

1.0

μs

ts

Storage Time

 

 

3.0

μs

tf

Fall Time

 

 

0.7

μs