詳細信息
供應(yīng)MJE13009三極管,TO-220,有意者請聯(lián)系!
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS)= 400V(Min.)
·Collector Saturation Voltage
: VCE(sat)= 1.5 (Max) @ IC= 8.0A
·Switching Time
: tf= 0.7μs(Max.)@ IC= 8.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCEV | Collector-Emitter Voltage | 700 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 9 | V |
IC | Collector Current-Continuous | 12 | A |
ICM | Collector Current-peak | 24 | A |
IB | Base Current | 6 | A |
IBM | Base Current-Peak | 12 | A |
IE | Emitter Current | 18 | A |
IEM | Emitter Current-Peak | 36 | A |
PC | Collector Power Dissipation TC=25℃ | 100 | W |
Ti | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 10mA; IB= 0 | 400 | V | ||
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 5A ;IB= 1A | 1.0 | V | ||
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 8A ;IB= 1.6A TC= 100℃ | 1.5 2.0 | V | ||
VCE(sat)-3 | Collector-Emitter Saturation Voltage | IC= 12A ;IB= 3A | 3.0 | V | ||
VBE(sat)-1 | Base-Emitter Saturation Voltage | IC= 5A ;IB= 1A | 1.2 | V | ||
VBE(sat)-2 | Base-Emitter Saturation Voltage | IC= 8A ;IB= 1.6A TC= 100℃ | 1.6 1.5 | V | ||
ICEV | Collector Cutoff Current | VCEV= 700V;VBE(off)= 1.5V TC= 100℃ | 1 5 | mA | ||
IEBO | Emitter Cutoff Current | VEB= 9V; IC= 0 | 1 | mA | ||
hFE-1 | DC Current Gain | IC= 5A; VCE= 5V | 8 | 40 | ||
hFE-2 | DC Current Gain | IC= 8A; VCE= 5V | 6 | 30 | ||
fT | Current-Gain—Bandwidth Product | IC= 0.5 A; VCE= 10V; | 4 | MHz | ||
COB | Output Capacitance | IE= 0; VCB= 10V; ftest= 0.1MHz | 180 | pF | ||
Switching Times; Resistive Load | ||||||
td | Storage Time | IC= 8A; VCC= 125V; IB1= IB2= 1.6A; tp= 25μs; Duty Cycle≤1% | 0.1 | μs | ||
tr | Fall Time | 1.0 | μs | |||
ts | Storage Time | 3.0 | μs | |||
tf | Fall Time | 0.7 | μs |