詳細信息
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MJE13009 TRANSISTOR(NPN)
1:FEATURES
Power switching applications
2:MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
symbol | parameter | value | units |
Vcbo | Collector-Base Voltage | 700 | V |
Vceo | Collector-Emitter Voltage | 400 | V |
Vebo | Emitter-Base Voltage | 9 | V |
Ic | Collector Current-Continuous（DC） | 12 | A |
Ic | Collector Current-Continuous(Pulse) | 12 | A |
IB | Base Current | 4 | A |
Pc | Collector Power Dissipation | 100 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65-150 | ℃ |
3:ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)cbo | IC=1mA IE=0 | 700 | V | ||
Collector-emitter breakdown voltage | V(BR)ceo | IC=10mA IB=0 | 400 | V | ||
Emitter-base breakdown voltage | V(BR)ebo | IE=1mA IC=0 | 9 | V | ||
Collector cut-off Current | Icbo | Vcb=700V IE=0 | 1 | mA | ||
Collector cut-off Current | Iceo | Vce=400V IB=0 | 100 | uA | ||
Emitter cut-off Current | Iebo | Veb=9V IC=0 | 1 | mA | ||
DC Current gain | hEF(1) | Vce=5V IC=2A | 10 | 40 | ||
hEF(2) | Vce=5V IC=5A | 5 | 30 | |||
Collector-emitter saturation voltage | VCE(sat) | IC=2A IB=0.4A IC=5A IB=1A IC=8A IB=2A | 1 2 3 | V | ||
Base -emitter saturation voltage | VBE(sat) | IC=2A IB=0.4A IC=5A IB=1A | 1.2 1.8 | V | ||
Transition frequency | fT | Vce=10VIC=500mA f=1MHZ | 4 | MHZ | ||
Fall time | tf | VCC=125V IC=5A IB1=-IB2=1A | 0..7 | US | ||
Storage time | ts | 3 | US |
4:CLASSIFICATION OF hEF(1)
Rank | ||||||||
Range | 8-15 | 15-18 | 18-20 | 20-23 | 23-25 | 25-28 | 28-30 | 30-40 |