詳細(xì)信息
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: KSP44
: KSP45
500
400
VV
VCEO Collector-Emitter Voltage
: KSP44
: KSP45
400
350
VV
VEBO Emitter-Base Voltage 6 V
IC Collector Current 300 mA
PC Collector Power Dissipation (Ta=25°C) 625 mW
PC Collector Power Dissipation (TC=25°C) 1.5 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage
: KSP44
: KSP45
IC=100μA, IB=0
500
400
VV
BVCEO * Collector -Emitter Breakdown Voltage
: KSP44
: KSP45
IC=1mA, IB=0
400
350
VV
BVEBO Emitter-Base Breakdown Voltage IE=100μA, IC=0 6 V
ICBO Collector Cut-off Current
: KSP44
: KSP45
VCB=400V, IE=0
VCB=320V, IE=0
0.1
0.1
μA
μA
ICES Collector Cut-off Current
: KSP44
: KSP45
VCE=400V, IB=0
VCE=320V, IB=0
0.5
0.5
μA
μA
IEBO Emitter Cut-off Current VEB=4V, IC=0 0.1 μA
hFE * DC Current Gain VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
40
50
45
40
200
VCE (sat) * Collector-Emitter Saturation Voltage IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.4
0.5
0.75
VVV
VBE (sat) * Base-Emitter Saturation Voltage IC=10mA, IB=1mA 0.75 V
Cob Output Capacitance VCB=20V, IE=0, f=1MHz 7 pF