無(wú)錫固電ISC H1061晶體管

H1061三極管，TO-220
DESCRIPTION                                             
·DC Current Gain-
: h_FE=60-200@I_C=1A
·Low Collector Saturation Voltage-
  : V_CE(sat)=1.0V(Max)@I_C=2.0A,I_B=0.2A
 
 
APPLICATIONS
·Designed for low frequency power amplifier applications
  
 

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	100	V
VCEO	Collector-Emitter Voltage	80	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	4	A
ICM	Collector Current-Peak	8	A
PC	Collector Power Dissipation @ TC=25℃	40	W
TJ	JunctionTemperature	150	℃
Tstg	StorageTemperature Range	-55~150	℃

ELECTRICAL CHARACTERISTICS
T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= 50mA; IB= 0	80			V
V(BR)EBO	Emitter-BaseBreakdownVoltage	IE=1mA; IC= 0	5			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 2A; IB= 0.2A			1.0	V
VBE(on)	Base-Emitter On Voltage	IC= 1.0A; VCE= 4V			1.5	V
ICBO	Collector Cutoff Current	VCB= 80V; IE= 0			0.1	mA
IEBO	Emitter Cutoff Current	VEB= 4V; IC= 0			0.1	mA
hFE-1	DC Current Gain	IC= 1A; VCE= 4V	60		200
hFE-2	DC Current Gain	IC= 0.1A; VCE= 4V	35
COB	Output Capacitance	IE=0; VCB= 20V; ftest= 1.0MHz		40		pF
fT	Current-Gain—Bandwidth Product	IC= 0.5A; VCE= 5V		10		MHz