詳細(xì)信息
iscSilicon NPN Power Transistor 2SC2246
DESCRIPTION
·HighCollector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·High Switching Speed
APPLICATIONS
·Power switching
·Power amplification
·Power driver
Absolute maximum ratings(Ta=25℃)
SYMBOL | PARAMETER | MAX | UNIT |
VCBO | Collector-Base Voltage | 450 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 15 | A |
ICM | Collector Current-Peak | 30 | A |
IB | Base Current-Continuous | 6 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 200 | ℃ |
Tstg | StorageTemperature Range | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1.0 | ℃/W |
iscSilicon NPN Power Transistor 2SC2246
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 100mA; L= 25mH | 400 | V | ||
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A; IB= 1.2A | 1.2 | V | ||
VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A; IB= 1.2A | 1.5 | V | ||
hFE | DC Current Gain | IC= 5A; VCE= 2V | 12 | 60 | ||
hFE | DC Current Gain | IC= 10A; VCE= 2V | 6 | 30 | ||
ICBO | Collector Cutoff Current | VCB= 450V; IE= 0 TC=125℃ | 1.0 4.0 | mA | ||
ICEO | Collector Cutoff Current | VCE= 400V; IB= 0 | 5.0 | mA | ||
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | 1.0 | mA | ||
Switching Times | ||||||
tr | Rise Time | IC= 6A; IB1=- IB2= 1.2A | 1.0 | μs | ||
tstg | Storage Time | 2.0 | μs | |||
tf | Fall Time | 1.0 | μs |