詳細(xì)信息
MMBT5551 TRANSISTOR (NPN)
FEATURES
z Complementary to MMBT5401
z Ideal for Medium Power Amplification and Switching
MARKING: G1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 600 mA
PC Collector Power Dissipation 300 mW
RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO*
IC=1mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V
Collector cut-off current ICBO VCB=120V, IE=0 50 nA
Emitter cut-off current IEBO VEB=4V, IC=0 50 nA
hFE(1) * VCE=5V, IC=1mA 80
hFE(2) * DC current gain VCE=5V, IC=10mA 100 300
hFE(3) * VCE=5V, IC=50mA 50
VCE(sat)1*
IC=10mA, IB=1mA 0.15 V
Collector-emitter saturation voltage VCE(sat)2*
IC=50mA, IB=5mA 0.2 V
VBE(sat)1*
IC=10mA, IB=1mA 1 V
Base-emitter saturation voltage VBE(sat)2*
IC=50mA, IB=5mA 1 V
Transition frequency fT VCE=10V,IC=10mA, f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE (2)
RANK L H
RANGE 100-200 200-300