三極管2N6678

10. 
 
供應(yīng)2N6678三極管,TO-3，有意者請聯(lián)系
DESCRIPTION                                               
·High Voltage Capability
·Fast Switching Speed
·Low Saturation Voltage
 
APPLICATIONS
Designed for high voltage switching applications such as:
·Off-line power supplies
·Converter circuits
·PWM regulators
  
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCEV	Collector-Emitter Voltage	650	V
VCEX	Collector-Emitter Voltage	450	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	8.0	V
IC	Collector Current-Continuous	15	A
ICM	Collector Current-Peak	20	A
IB	Base Current-Continuous	5.0	A
PC	Collector Power Dissipation@TC=25℃	175	W
TJ	Junction Temperature	200	℃
Tstg	Storage Temperature	-65~200	℃

ELECTRICAL CHARACTERISTICS
T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC=200mA ; IB=0	400		V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 15A; IB= 3.0A		1.5	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 15A; IB= 3.0A		1.5	V
ICEV	Collector Cutoff Current	VCE= Rated VCEV; VBE(off)=-1.5V VCE= Rated VCEV; VBE(off)=-1.5V ; TC=100℃		0.1 1.0	mA
IEBO	Emitter Cutoff Current	VEB= 8.0V; IC=0		2.0	mA
hFE	DC Current Gain	IC= 15A ; VCE= 3V	8.0
fT	Current Gain-Bandwidth Product	IC= 1.0A ; VCE= 10V; ftest=5.0MHz	3.0		MHz
COB	Output Capacitance	IE= 0; VCB= 10V; ftest=0.1MHz		500	pF
Switching times
td	Delay Time	IC= 15A , VCC= 200V,IB1= -IB2= 3A, tp=20μs, Duty Cycle≤2.0% VBB=6V, RL=13.5Ω		0.2	μs
tr	Rise Time			0.6	μs
ts	Storage Time			2.5	μs
tf	Fall Time			0.6	μs