無錫固電ISC 晶體管 BU508AF

供應三極管BU508AF,有意請聯(lián)系！
DESCRIPTION                                             
·Collector-Emitter Sustaining Voltage-
  : V_CEO(SUS)= 700V (Min)
·High Switching Speed
 
APPLICATIONS
·Designed for use in horizontal deflection circuits of
  color TV receivers.
 

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCES	Collector- Emitter Voltage(VBE= 0)	1500	V
VCEO	Collector-Emitter Voltage	700	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current- Continuous	8	A
ICM	Collector Current-Peak	15	A
IB	Base Current- Continuous	4	A
IBM	Base Current-Peak	6	A
PC	Collector Power Dissipation @ TC=25℃	60	W
TJ	JunctionTemperature	150	℃
Tstg	StorageTemperature Range	-65~150	℃

 

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance,Junction to Case	2.5	℃/W

ELECTRICAL CHARACTERISTICS
T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 100mA ; IB=0	700			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 4.5A; IB= 2.0A			1.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 4.5A; IB= 2.0A			1.5	V
ICES	Collector Cutoff Current	VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃			1.0 2.0	mA
IEBO	Emitter Cutoff Current	VEB= 5.0V ; IC= 0			10	mA
hFE-1	DC Current Gain	IC= 0.1A ; VCE= 5V	6		30
hFE-2	DC Current Gain	IC= 4.5A ; VCE= 5V	2.25
COB	Output Capacitance	IE= 0; VCB= 10V; ftest= 0.1MHz		125		pF
fT	Current-Gain—Bandwidth Product	IC= 0.1A; VCE= 5V; ftest= 1.0MHz		7		MHz
Switching times
tstg	Storage Time	IC= 4.5A , IB1= 1.8A; LB= 10μH		8.0		μs
tf	Fall Time			0.5		μs