無錫固電半導(dǎo)體ISC2SA1305三極管

批發(fā)數(shù)量 ≥1000PCS
梯度價(jià)格 2.20
型號
2SA1305
品牌
ISC
應(yīng)用范圍
放大
材料
硅(Si)
封裝形式
直插型
類型
其他IC
極性
PNP型
封裝材料
塑料封裝

DESCRIPTION                                             
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -30V(Min)
·Good Linearity of hFE
·Complement to Type 2SC3297
 
 
APPLICATIONS
·Power amplifier applications.
·Car radio and car stereo output stage applications.
 
 
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous  

-3

A

IB

Base Current-Continuous  

-0.3

A

PC

Collector Power Dissipation
@TC=25℃

15

W

TJ

Junction Temperature

150


Tstg

Storage Temperature

-55~150


 
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -10mA; IB= 0

-30

 
 
V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -2A; IB= -0.2A

 

 

-0.8

V

VBE(on)

Base-Emitter On Voltage

IC= -0.5A; VCE= -2V

 

 

-1.0

V

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

 

 

-1.0

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

 

 

-1.0

μA

hFE-1

DC Current Gain

IC= -0.5A; VCE= -2V

70

 

240

 

hFE-2

DC Current Gain

IC= -2.5A; VCE= -2V

25

 

 

 

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -2V

 

100

 

MHz

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

 

40

 

pF

 
hFE-1Classifications

O

Y

70-140

120-240