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參數(shù)資料
| 型號(hào)： | CA3127MZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | High Frequency NPN Transistor Array |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOIC-16 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 232K |
| 代理商： | CA3127MZ |
3
FN662.5
June 5, 2006
Test Circuits
Input Resistance
Common-Emitter Configuration
V
CE
= 6V, I
C
= 1mA, f = 200 MHz
-
400
-
Output Resistance
-
4.6
-
k
Input Capacitance
-
3.7
-
pF
Output Capacitance
-
2
-
pF
Magnitude of Forward Transadmittance
-
24
-
mS
NOTE:
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance or
electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.
Electrical Specifications
TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
FIGURE 1. VOLTAGE-GAIN TEST CIRCUIT USING CURRENT-MIRROR BIASING FOR Q
2
FIGURE 2. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT
7
8
4
2
3
6
GEN
10k
BIAS-CURRENT
ADJ
V+
R
L
470
pF
0.01
μ
F
1
μ
F
V
O
Q
2
0.01
μ
F
470pF
51
V
I
Q
3
0.01
μ
F
1
μ
F
470pF
1000
pF
NOTES:
4. This circuit was chosen because it conveniently
represents a close approximation in performance to a
properly unilateralized single transistor of this type. The
use of Q
3
in a current-mirror configuration facilitates
simplified biasing. The use of the cascode circuit in no
way implies that the transistors cannot be used
individually.
5. E.F. Johnson number 160-104-1 or equivalent.
4
3
2
13
12
14
6
7
5
8
SHIELD
Q
5
620
Q
2
C
1
1.8pF
0.3
μ
H
1000pF
V
I
OHMITE
Z144
(NOTE 5)
Q
3
25k
1000
pF
1000
pF
560
750
1%
1000
pF
8.2
k
0.47
μ
H
1.5 - 8pF
V
O
+12V
C
2
TEST
POINT
(NOTE 5)
CA3127
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| CA3128 WAF | 制造商:Harris Corporation 功能描述: |
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| CA3130 DIE | 制造商:Intersil Corporation 功能描述: |
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