參數(shù)資料
型號(hào)： CA3127M
廠商： INTERSIL CORP
元件分類： 小信號(hào)晶體管
英文描述： High Frequency NPN Transistor Array
中文描述： 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AC
封裝： PLASTIC, SOIC-16
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 60K
代理商： CA3127M
5-2
CA3127
Absolute Maximum Ratings
The following ratings apply for each transistor in the device
Collector-to-Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, V
CIO
(Note 1). . . . . . . . . . . . . 20V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20mA
Thermal Information
Thermal Resistance (Typical, Note 2)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation, P
D
(Any One Transistor). . . . . . 85mW
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175
o
C
Maximum Junction Temperature (Plastic Packages). . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
θ
JA
(
o
C/W)
90
175
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be con-
nected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
A
= 25
o
C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
(For Each Transistor)
Collector-to-Base Breakdown Voltage
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C1
= 10
μ
A, I
B
= 0, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V I
B
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 6V
20
32
-
V
Collector-to-Emitter Breakdown Voltage
15
24
-
V
Collector-to-Substrate Breakdown-Voltage
20
60
-
V
Emitter-to-Base Breakdown Voltage (Note 3)
4
5.7
-
V
μ
A
nA
Collector-Cutoff-Current
-
-
0.5
Collector-Cutoff-Current
-
-
40
DC Forward-Current Transfer Ratio
I
C
= 5mA
I
C
= 1mA
I
C
= 0.1mA
I
C
= 5mA
I
C
= 1mA
I
C
= 0.1mA
35
88
-
40
90
-
35
85
-
Base-to-Emitter Voltage
V
CE
= 6V
0.71
0.81
0.91
V
0.66
0.76
0.86
V
0.60
0.70
0.80
V
Collector-to-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 1mA
Q
1
and Q
2
Matched
V
CE
= 6V, I
C
= 1mA
-
0.26
0.50
V
Magnitude of Difference in V
BE
Magnitude of Difference in I
B
DYNAMIC CHARACTERISTICS
-
0.5
5
mV
μ
A
-
0.2
3
Noise Figure
f = 100kHz, R
S
= 500
, I
C
= 1mA
V
CE
= 6V, I
C
= 5mA
V
CB
= 6V, f = 1MHz
V
CI
= 6V, f = 1MHz
V
BE
= 4V, f = 1MHz
V
CE
= 6V, f = 10MHz, R
L
= 1k
, I
C
= 1mA
Cascode Configuration
f = 100MHz, V+ = 12V, I
C
= 1mA
-
2.2
-
dB
Gain-Bandwidth Product
-
1.15
-
GHz
Collector-to-Base Capacitance
-
See
Fig. 5
-
pF
Collector-to-Substrate Capacitance
-
-
pF
Emitter-to-Base Capacitance
-
-
pF
Voltage Gain
-
28
-
dB
Power Gain
27
30
-
dB
Noise Figure
-
3.5
-
dB
k
pF
Input Resistance
Common-Emitter Configuration
V
CE
= 6V, I
C
= 1mA, f = 200 MHz
-
400
-
Output Resistance
-
4.6
-
Input Capacitance
-
3.7
-
Output Capacitance
-
2
-
pF
Magnitude of Forward Transadmittance
-
24
-
mS
NOTE:
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance
or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.
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