參數(shù)資料
型號(hào)： CA3127E
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： High Frequency NPN Transistor Array
中文描述： 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-001-BB
封裝： MS-001BB, 16 PIN
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 60K
代理商： CA3127E
5-4
CA3127
Typical Performance Curves
FIGURE 4. NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 5. NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 6. GAIN-BANDWIDTH PRODUCT vs COLLECTOR
CURRENT
FIGURE 7. BASE-TO-EMITTER VOLTAGE vs COLLECTOR
CURRENT
FIGURE 8A. CAPACITANCE vs BIAS VOLTAGE FOR Q
2
FIGURE 8B. TYPICAL CAPACITANCE VALUES AT f = 1MHz.
THREE TERMINAL MEASUREMENT. GUARD ALL
TERMINALS EXCEPT THOSE UNDER TEST.
30
20
10
0
0.01
N
0.1
1.0
COLLECTOR CURRENT (mA)
T
A
= 25
o
C
V
CE
= 6V
R
SOURCE
= 500
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 100kHz
30
20
10
0
N
0.01
0.1
1.0
COLLECTOR CURRENT (mA)
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 100kHz
T
A
= 25
o
C
V
CE
= 6V
R
SOURCE
= 1k
T
A
= 25
o
C
V
CE
= 6V
G
1.2
1.1
1.0
0.9
0.8
1
2
3
4
5
6
7
8
9
10
COLLECTOR CURRENT (mA)
0
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.1
COLLECTOR CURRENT (mA)
1
10
T
A
= 25
o
C
T
A
= -55
o
C
T
A
= 125
o
C
C
BIAS VOLTAGE (V)
2.25
1.25
1.00
0.75
0.50
0.25
0
1
2
3
4
5
6
7
8
9
10
C
CB
C
CI
C
EB
T
A
= 25
o
C
f = 1MHz
1.50
1.75
2.00
TRAN-
SISTOR
CAPACITANCE (pF)
C
CB
C
CE
C
EB
C
CI
PKG TOTAL PKG TOTAL PKG TOTAL PKG TOTAL
BIAS
(V)
-
6V
-
6V
-
4V
-
6V
Q
1
0.025 0.190 0.090 0.125 0.365 0.610 0.475
1.65
Q
2
0.015 0.170 0.225 0.265 0.130 0.360 0.085
1.35
Q
3
0.040 0.200 0.215 0.240 0.360 0.625 0.210
1.40
Q
4
0.040 0.190 0.225 0.270 0.365 0.610 0.085
1.25
Q
5
0.010 0.165 0.095 0.115 0.140 0.365 0.090
1.35
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相關(guān)代理商/技術(shù)參數(shù)
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