參數(shù)資料
型號: BZA109
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 9-fold ESD transient voltage suppressor(9迭層ESD瞬變電壓抑制器)
中文描述: 25 W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, MS-013AC
封裝: PLASTIC, SO-20
文件頁數(shù): 2/12頁
文件大?。?/td> 144K
代理商: BZA109
1997 Dec 01
2
Philips Semiconductors
Product specification
9-fold ESD transient voltage suppressor
BZA109
FEATURES
ESD rating >8 kV, according to
IEC1000-4-2
SOT163-1 surface mount package
Common anode configuration
Non-clamping range 0.5 to 6.8 V
Maximum non-repetitive peak
reverse power dissipation: 25 W
at t
p
= 1 ms
Maximum clamping voltage at peak
pulse current: 10 V at I
ZSM
= 2.5 A.
APPLICATIONS
For 9-bit wide undershoot/
overshoot clamping and fast ESD
transient suppression in:
– Computers and peripherals
– Audio and video equipment
– Business machines
– Communication systems
– Medical equipment.
DESCRIPTION
9-fold monolithic transient voltage
suppressor in an SO20; SOT163-1
surface mount package. The device is
ideal in situations where board space
is a premium.
PINNING
PIN
DESCRIPTION
1 to 5
6 and 15
7 to 10
11 to 14
16 to 20
input (IN1 to IN5)
common anode (GND)
input (IN6 to IN9)
output (OUT9 to OUT6)
output (OUT5 to OUT1)
Fig.1 Pin configuration for SO20 (SOT163-1) and symbol.
handbook, 4 columns
SO20
MBK268
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
19
18
17
16
15
14
13
12
11
20
2
3
4
5
6
7
8
9
10
1
OUT1
OUT2
IN2
OUT3
IN3
OUT4
IN4
OUT5
IN5
GND
GND
OUT6
IN6
OUT7
IN7
OUT8
IN8
OUT9
IN9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Current is flowing from input to corresponding output.
One or more diodes loaded.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
I
Z
I
F
I
FT
I
FSM
I
ZSM
P
tot
P
ZSM
working current
continuous forward current
feed-through current
non-repetitive peak forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
operating junction temperature
T
amb
= 25
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C; note 1
t
p
= 1 ms; square pulse
t
p
= 1 ms; square pulse; see Fig.2
T
amb
25
°
C; note 2; see Fig.3
t
p
= 1 ms; square pulse; see Fig.4
20
100
100
4.5
2.5
1.25
25
mA
mA
mA
A
A
W
W
T
stg
T
j
65
65
+150
+150
°
C
°
C
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