參數(shù)資料
型號： BZA100
廠商： NXP Semiconductors N.V.
元件分類： 電路保護
英文描述： 18-fold ESD transient voltage suppressor
封裝： BZA100<SOT163-1 (SO20)|<<http://www.nxp.com/packages/SOT163-1.html<1<week 23, 2005,;
文件頁數(shù)： 2/7頁
文件大?。?/td> 127K
代理商： BZA100
1997 Dec 02
2
NXP Semiconductors
Product data sheet
18-fold ESD transient voltage
suppressor
BZA100
FEATURES
SO20 SMD package allows 18
separate voltage regulator diodes
in a common anode configuration
Working voltage: typ. 6.8 V
Forward voltage: max. 1.3 V
Maximum reverse peak power
dissipation: 27.5 W at t
p
= 1 ms
Maximum clamping voltage at peak
pulse current: 11 V at 2.5 A
Low leakage current: max. 2
μ
A
ESD rating >8 kV, according
IEC 801-2.
APPLICATIONS
Where transient overvoltage
protection in voltage and ESD
sensitive equipment is required
such as:
– Computers
– Printers
– Business machines
– Communication systems
– Medical equipment.
DESCRIPTION
18-fold monolitic transient voltage
suppressor. Its 18-fold junction
common anode design protects 18
separate lines using only one
package. This device is ideal for
situations where board space is a
premium.
PINNING
PIN
DESCRIPTION
1 to 5
6 and 16
7 to 15
17 to 20
cathode (k
1
to k
5
)
common anode (a
1
; a
2
)
cathode (k
6
to k
14
)
cathode (k
15
to k
18
)
Fig.1 Pin configuration for SO20 (SOT163-1) and symbol.
handbook, 4 columns
SO20
MBG396
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
19
18
17
16
15
14
13
12
11
20
2
3
4
5
6
7
8
9
10
1
k18
k17
k2
k16
k3
k15
k4
a2
k5
k14
a1
k13
k6
k12
k7
k11
k8
k10
k9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
DC working current limited by P
tot max
.
One or more diodes loaded; T
s
is the temperature at the soldering point.
One or more diodes loaded; device mounted on a printed-circuit board with R
th a-s
= 43.5 K/W.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
Z
I
F
I
FSM
I
ZSM
P
tot
working current
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
total power dissipation
note 1
200
4
2.5
mA
mA
A
A
t
p
= 1 ms; square pulse
t
p
= 1 ms; square pulse; see Fig.2
see Fig.3
up to T
s
= 60
°
C; note 2
up to T
amb
= 25
°
C; note 3
t
p
= 1 ms; square pulse; see Fig.4
1.6
1.25
27.5
W
W
W
P
ZSM
non-repetitive peak reverse power
dissipation
storage temperature
operating junction temperature
T
stg
T
j
65
+150
150
°
C
°
C
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參數(shù)描述
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