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參數(shù)資料
| 型號： | BUT11 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 96K |
| 代理商： | BUT11 |
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT11; BUT11A
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0; L = 25 mH; see
Figs 5 and 6
BUT11
BUT11A
collector-emitter saturation voltage
BUT11
I
C
= 3 A; I
B
= 600 mA; see Figs 7 and 9
BUT11A
I
C
= 2.5 A; I
B
= 500 mA; see
Figs 7 and 9
base-emitter saturation voltage
BUT11
I
C
= 3 A; I
B
= 0.6 A; see Fig.7
BUT11A
I
C
= 2.5 A; I
B
= 0.5 A; see Fig.7
collector-emitter cut-off current
V
CE
= V
CESMmax
; V
BE
= 0; note 1
V
CE
= V
CESMmax
; V
BE
= 0; T
j
= 125
°
C;
note 1
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0
DC current gain
V
CE
= 5 V; I
C
= 5 mA; see Fig.10
V
CE
= 5 V; I
C
= 500 mA; see Fig.10
400
450
V
V
V
CEsat
1.5
1.5
V
V
V
BEsat
1.3
1.3
1
2
V
V
mA
mA
I
CES
I
EBO
h
FE
10
10
18
20
10
35
35
mA
Switching times resistive load
(see Fig.12)
t
on
turn-on time
BUT11
BUT11A
storage time
BUT11
BUT11A
fall time
BUT11
BUT11A
I
Con
= 3 A; I
Bon
=
I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 500 mA
1
1
μ
s
μ
s
t
s
I
Con
= 3 A; I
Bon
=
I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 500 mA
4
4
μ
s
μ
s
t
f
I
Con
= 3 A; I
Bon
=
I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 500 mA
0.8
0.8
μ
s
μ
s
Switching times inductive load
(see Fig.14)
t
s
storage time
BUT11
I
Con
= 3 A; I
Bon
= 600 mA
I
Con
= 3 A; I
Bon
= 600 mA; T
j
= 100
°
C
I
Con
= 2.5 A; I
Bon
= 500 mA
I
Con
= 2.5 A; I
Bon
= 500 mA; T
j
= 100
°
C
1.1
1.2
1.1
1.2
1.4
1.5
1.4
1.5
μ
s
μ
s
μ
s
μ
s
BUT11A
t
f
fall time
BUT11
I
Con
= 3 A; I
Bon
= 600 mA
I
Con
= 3 A; I
Bon
= 600 mA; T
j
= 100
°
C
I
Con
= 2.5 A; I
Bon
= 500 mA
I
Con
= 2.5 A; I
Bon
= 500 mA; T
j
= 100
°
C
80
140
80
140
150
300
150
300
ns
ns
ns
ns
BUT11A
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| BUT12F | Silicon diffused power transistors |
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| BUT12AF | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| BUT14 | 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUT11/B | 制造商:NXP Semiconductors 功能描述: |
| BUT11A | 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUT11A,127 | 功能描述:兩極晶體管 - BJT BUT11A/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUT11A | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN TO-220AB |
| BUT11A/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HOCHSPANNUNG BIPOLAR |
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