參數(shù)資料
型號： BUK661R8-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 120 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 7/14頁
文件大小： 169K
代理商： BUK661R8-30C
BUK661R8-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2.1 — 18 August 2011
7 of 14
NXP Semiconductors
BUK661R8-30C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= 0 V; V
DS
= 25 V
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
62.7
115
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7.
Forward transconductance as a function of
drain current; typical values
Fig 8.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
003aae293
0
20
40
60
0
0.25
0.5
0.75
1
V
DS
(V)
I
D
(A)
3.8
4
4.5
5
10
V
GS
(V) = 3.3
3.4
3.6
003aae294
0
20
40
60
80
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aae295
0
50
100
150
200
0
25
50
75
100
I
D
(A)
g
fs
(S)
003aae365
0
3
6
9
12
15
0
4
8
12
16
V
GS
(V)
R
DSon
(m
Ω
)
相關(guān)PDF資料
PDF描述
BUK661R9-40C N-channel TrenchMOS intermediate level FET
BUK662R4-40C N-channel TrenchMOS FET
BUK662R5-30C N-channel TrenchMOS intermediate level FET
BUK662R7-55C N-channel TrenchMOS intermediate level FET
BUK663R2-40C N-channel TrenchMOS intermediate level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK661R8-30C,118 功能描述:MOSFET N-CHAN 30V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK661R9-40C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK661R9-40C,118 功能描述:MOSFET N-CHAN 40V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK662R4-40C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT404 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK
BUK662R4-40C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*