參數(shù)資料
型號(hào)： BUK6610-75C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS FET
中文描述： 78 A, 75 V, 0.0142 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 7/15頁
文件大?。?/td> 198K
代理商： BUK6610-75C
BUK6610-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 14 October 2010
7 of 15
NXP Semiconductors
BUK6610-75C
N-channel TrenchMOS FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= 0 V; V
DS
= 25 V
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
50.5
105
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aae411
0
20
40
60
80
100
120
g
fs
(S)
0
20
40
60
80
100
I
D
(A)
003aae811
0
40
80
120
160
0
1
2
3
4
V
DS
(V)
I
D
(A)
3.8
4.0
4.5
5.0
6.0
3.2
V
GS
(V) = 10
3.4
3.6
003aae812
0
30
60
90
120
150
I
D
(A)
0
2
4
6
V
GS
(V)
T
j
= 25
°
C
T
j
= 175
°
C
003aae814
0
10
20
30
40
0
5
10
15
20
V
GS
(V)
R
DSon
(m
Ω
)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK6610-75C,118 功能描述:MOSFET N-CHAN 75V 78A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK661R6-30C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1400ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK661R6-30C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK661R8-30C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK661R8-30C,118 功能描述:MOSFET N-CHAN 30V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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