參數資料
型號: BUK6610-75C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS FET
中文描述: 78 A, 75 V, 0.0142 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數: 11/15頁
文件大?。?/td> 198K
代理商: BUK6610-75C
BUK6610-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 14 October 2010
11 of 15
NXP Semiconductors
BUK6610-75C
N-channel TrenchMOS FET
7.
Package outline
Fig 17. Package outline SOT404 (D2PAK)
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
A1
D1
D
max.
E
e
Lp
HD
Q
c
2.54
2.60
2.20
15.80
14.80
2.90
2.10
11
1.60
1.20
10.30
9.70
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0
2.5
5 mm
scale
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
e
e
E
b
D1
HD
D
Q
Lp
c
A1
A
1
3
2
mounting
base
05-02-11
06-03-16
相關PDF資料
PDF描述
BUK661R6-30C N-channel TrenchMOS intermediate level FET
BUK661R8-30C N-channel TrenchMOS intermediate level FET
BUK661R9-40C N-channel TrenchMOS intermediate level FET
BUK662R4-40C N-channel TrenchMOS FET
BUK662R5-30C N-channel TrenchMOS intermediate level FET
相關代理商/技術參數
參數描述
BUK6610-75C,118 功能描述:MOSFET N-CHAN 75V 78A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK661R6-30C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1400ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK661R6-30C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK661R8-30C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK661R8-30C,118 功能描述:MOSFET N-CHAN 30V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube