參數(shù)資料
型號(hào): BUK6607-75C
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: N-channel TrenchMOS FET
中文描述: 100 A, 75 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 5/14頁(yè)
文件大小: 358K
代理商: BUK6607-75C
BUK6607-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 November 2010
5 of 14
NXP Semiconductors
BUK6607-75C
N-channel TrenchMOS FET
5.
Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see
Figure 4
Min
-
Typ
-
Max
0.74
Unit
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
003aae545
single pulse
0.2
0.1
0.05
0.02
10
3
10
2
10
1
1
10
5
10
4
10
3
10
2
10
1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ
= 0.5
t
p
t
p
T
T
P
t
δ
=
10
6
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