參數(shù)資料
型號： BUK653R5-55C
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： N溝道 TrenchMOS 中間級場效應(yīng)管
封裝： BUK653R5-55C<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<Always Pb-free,;
文件頁數(shù)： 7/14頁
文件大?。?/td> 364K
代理商： BUK653R5-55C
BUK653R5-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 27 October 2010
7 of 14
NXP Semiconductors
BUK653R5-55C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
I
S
= 20 A; dI
S
/dt = -100 A/μs; V
GS
= 0 V;
V
DS
= 25 V
-
0.85
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
65
148
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aae388
0
30
60
90
120
150
g
fs
(S)
0
10
20
30
40
50
I
D
(A)
003aae389
0
20
40
60
80
100
I
D
(A)
0
0.2
0.4
0.6
0.8
1
V
DS
(V)
3.8
4.0
4.5
5.0
6.0
V
GS
(V) =
10
8.0
3.3
3.4
3.6
003aae390
0
20
40
60
80
0
1
2
3
4
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
003aae391
0
4
8
12
16
0
4
8
12
16
V
GS
(V)
R
DSon
(m
Ω
)
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BUK653R5-55C,127 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK653R7-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V100ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,100A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,100A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK653R7-30C,127 功能描述:MOSFET N-CHAN 30V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK654R0-75C 制造商:NXP Semiconductors 功能描述:Tube 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB
BUK654R0-75C,127 功能描述:MOSFET N-CHAN 75V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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