- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369501 > BSP308 ?Small Signal MOSFET.30V. SOT-223. RDSon = 75mOhm. 4.7A. LL ? PDF資料下載
參數(shù)資料
| 型號： | BSP308 |
| 英文描述： | ?Small Signal MOSFET.30V. SOT-223. RDSon = 75mOhm. 4.7A. LL ? |
| 中文描述： | ？小信號MOSFET.30V。采用SOT - 223。導(dǎo)通狀態(tài)\u003d 75mOhm。 4.7A。當(dāng)?shù)毓蛦T？ |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 76K |
| 代理商： | BSP308 |
1999-09-22
Page 9
BSP308
Preliminary data
Published by
Infineon Technologies AG
,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BSP30 | MEDIUM POWER AMPLIFIER |
| BSP30 | Surface mount Si-Epitaxial PlanarTransistors |
| BSP317Q67000-S94 | TRANSISTOR MOSFET SMD SOT 223 |
| BSP318 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.6A I(D) | SOT-223 |
| BSP31 | MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSP30T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-223 |
| BSP31 | 制造商:NXP Semiconductors 功能描述:PNP medium power transistor,BSP31 SC-73 |
| BSP31 T/R | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSP31,115 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSP31115 | 制造商:NXP Semiconductors 功能描述:TRANS PNP 60V 1A SOT-223 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。