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| 型號(hào)： | BS62UV2006 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 超低功率/電壓CMOS SRAM的256K × 8位 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 320K |
| 代理商： | BS62UV2006 |
R0201-BS62UV2006
Revision 1.1
Jan.
2004
5
BSI
READ CYCLE3 (1,4)
READ CYCLE2 (1,3,4)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2= VIH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = VIL
.
5. The parameter is guaranteed but not 100% tested.
t CLZ
(5)
D
OUT
CE2
CE1
(5)
t ACS2
t ACS1
t OH
t RC
t OE
CLZ2
t CHZ2
(2,5)
D
OUT
CE2
CE1
OE
ADDRESS
(5)
t CLZ1
(5)
t ACS1
t ACS2
t CHZ1
(1,5)
t OHZ (5)
t OLZ
t AA
t CHZ1, t CHZ2
BS62UV2006
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
t OH
t AA
D
OUT
ADDRESS
t OH
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| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
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| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
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