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參數(shù)資料
| 型號： | BS62LV4008TCG55 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 512K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的為512k × 8位 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 373K |
| 代理商： | BS62LV4008TCG55 |
Revision 1.1
Jan. 2004
6
JEDEC
PARAMETER
NAME
t
AVAX
DESCRIPTION
UNIT
t
WC
Write Cycle Time
55
--
--
70
--
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
55
--
--
70
--
--
ns
t
AVWL
t
AS
Address Set up Time
0
--
--
0
--
--
ns
t
AVWH
t
AW
Address Valid to End of Write
55
--
--
70
--
--
ns
t
WLWH
t
WP
Write Pulse Width
30
--
--
35
--
--
ns
t
WHAX
t
WR
Write Recovery Time
(CE , WE)
0
--
--
0
--
--
ns
t
WLOZ
t
WHZ
Write to Output in High Z
--
--
25
--
--
30
ns
t
DVWH
t
DW
Data to Write Time Overlap
25
--
--
30
--
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0
--
--
0
--
--
ns
t
GHOZ
t
OHZ
Output Disable to Output in High Z
--
--
25
--
--
30
ns
t
WHQX
t
OW
End ot Write to Output Active
5
--
--
5
--
--
ns
R0201-BS62LV4008
AC ELECTRICAL CHARACTERISTICS
( TA = -40 to + 85
o
C )
WRITE CYCLE
BSI
BS62LV4008
PARAMETER
NAME
MIN.
TYP. MAX.
(Vcc = 3.0~3.6V)
MIN.
TYP. MAX.
(Vcc = 2.7~3.6V)
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1
(1)
t
WR
(3)
t
CW
(11)
(2)
t
WP
t
AW
t
OHZ
(4,10)
t
AS
t
DH
t
DW
D
IN
D
OUT
WE
CE
OE
ADDRESS
(5)
t
WC
CYCLE TIME : 55ns
CYCLE TIME : 70ns
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| BS62LV8001ECP55 | 制造商:Brilliance Semiconductor Inc 功能描述:IC 8MB CMOS SRAM 62LV8001 TSOP44 |
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| BS62LV8001FIP55 | 制造商:Brilliance Semiconductor Inc 功能描述:IC SRAM 8M 1024KX8 2.4-5.5V SMD |
| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
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