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參數(shù)資料
| 型號： | BS62LV4008TCG55 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 512K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的為512k × 8位 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 373K |
| 代理商： | BS62LV4008TCG55 |
Revision 1.1
Jan. 2004
3
R0201-BS62LV4008
1. Typical characteristics are at T
A
= 25
o
C. 2. Fmax = 1/t
.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. I
cc
SB1_MAX.
is 5uA at Vcc=3.0V and T
A
=70
o
C.
5. Icc_
MAX.
is 29mA(@55ns)/24mA(@70ns) at Vcc=3.0V and T
A
=0~70
o
C.
DATA RETENTION CHARACTERISTICS
( TA = -40 to + 85
o
C )
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
3. I
cc
DR
_
MAX.
is 0.8uA at T
A
=70
O
C.
LOW V
CC
DATA RETENTION WAVEFORM
( CE Controlled )
DC ELECTRICAL CHARACTERISTICS
( TA = -40 to + 85
o
C )
BSI
CE
Data Retention Mode
≥
Vcc
t
CDR
Vcc
t
R
V
IH
V
IH
Vcc
V
DR
1.5V
CE Vcc - 0.2V
BS62LV4008
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
V
DR
Vcc for Data Retention
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
1.5
--
--
V
I
CCDR
Data Retention Current
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
--
0.3
1.3
uA
t
CDR
Chip Deselect to Data
Retention Time
0
--
--
ns
t
R
Operation Recovery Time
See Retention Waveform
T
RC
(2)
--
--
ns
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
V
IL
Guaranteed Input Low
Voltage
(3)
Guaranteed Input High
Voltage
(3)
Input Leakage Current
-0.5
--
0.8
V
V
IH
2.0
--
Vcc+0.3
V
I
IL
Vcc = Max, V
IN
= 0V to Vcc
--
--
1
uA
I
LO
Output Leakage Current
Vcc = Max, CE = V
IH
, or OE = V
IH
,
V
I/O
= 0V to Vcc
--
--
1
uA
V
OL
Output Low Voltage
--
--
V
V
OH
Output High Voltage
Vcc = Min, I
OH
= -1.0mA
--
--
V
I
CC
Operating Power Supply
Current
CE = V
IL
, I
DQ
= 0mA,
F=Fmax
(2)
--
--
30
mA
I
CCSB
Standby Current-TTL
CE = V
IH
, I
DQ
= 0mA
--
--
0.5
mA
I
CCSB1
CE
≧
Vcc-0.2V,
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
--
10
uA
Vcc = 3.0 V
Vcc = 3.0 V
Vcc = 3.0 V
Standby Current-CMOS
Vcc = 3.0 V
Vcc = 3.0 V
25
Vcc = 3.0 V
Vcc = 3.0 V
2.4
0.4
0.45
Vcc = Max, I
OL
= 2.0mA
(5)
(4)
70ns
55ns
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