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參數(shù)資料
| 型號： | BS62LV1600ECP70 |
| 廠商： | BRILLIANCE SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | Very Low Power CMOS SRAM 2M X 8 bit |
| 中文描述： | 2M X 8 STANDARD SRAM, 70 ns, PDSO44 |
| 封裝： | ROHS COMPLIANT, TSOP2-44 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 219K |
| 代理商： | BS62LV1600ECP70 |
BS62LV1600
R0201-BS62LV1600
Revision
May.
2.3
2006
5
n
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
READ CYCLE 2
(1,3,4)
READ CYCLE 3
(1, 4)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2= V
IH
.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with C
L
= 5pF.
The parameter is guaranteed but not 100% tested.
t
RC
t
OH
t
AA
D
OUT
ADDRESS
t
OH
t
CLZ
(5)
D
OUT
CE2
CE1
t
ACS2
t
ACS1
t
CHZ1
, t
CHZ2
(5)
t
OH
t
RC
t
OE
t
CLZ2
(5)
t
CHZ2
(1,5)
D
OUT
CE2
CE1
OE
ADDRESS
t
CLZ1
(5)
t
ACS1
t
ACS2
t
CHZ1
t
O(1,5)
(5)
t
OLZ
t
AA
相關PDF資料 |
PDF描述 |
|---|---|
| BS62LV1600EI55 | Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EI70 | Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIG55 | Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIG70 | Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIP55 | Very Low Power CMOS SRAM 2M X 8 bit |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BS62LV1600EI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
| BS62LV1600EI55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EI70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIG55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIG70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit |
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