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參數(shù)資料
| 型號： | BS62LV1600ECP70 |
| 廠商： | BRILLIANCE SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | Very Low Power CMOS SRAM 2M X 8 bit |
| 中文描述： | 2M X 8 STANDARD SRAM, 70 ns, PDSO44 |
| 封裝： | ROHS COMPLIANT, TSOP2-44 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 219K |
| 代理商： | BS62LV1600ECP70 |
BS62LV1600
R0201-BS62LV1600
Revision
May.
2.3
2006
2
n
PIN DESCRIPTIONS
Name
Function
A0-A20 Address Input
These 21 address inputs select one of the 2048K x 8-bit in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read form or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
There 8 bi-directional ports are used to read data from or write data into the RAM.
WE Write Enable Input
OE Output Enable Input
DQ0-DQ7 Data Input/Output
Ports
V
CC
Power Supply
V
SS
Ground
n
TRUTH TABLE
MODE
CE1
CE2
WE
OE
I/O OPERATION
V
CC
CURRENT
H
X
X
X
Not selected
(Power Down)
X
L
X
X
High Z
I
CCSB
, I
CCSB1
Output Disabled
L
H
H
H
High Z
I
CC
Read
L
H
H
L
D
OUT
I
CC
Write
L
H
L
X
D
IN
I
CC
n
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
PARAMETER
RATING
UNITS
V
TERM
Terminal Voltage with
Respect to GND
Temperature Under
Bias
-0.5
(2)
to 7.0
V
T
BIAS
-40 to +125
O
C
T
STG
Storage Temperature
-60 to +150
O
C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
20
mA
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2.
–
2.0V in case of AC pulse width less than 30 ns.
n
OPERATING RANGE
RANG
AMBIENT
TEMPERATURE
V
CC
Commercial
0
O
C to + 70
O
C
2.4V ~ 5.5V
Industrial
-40
O
C to + 85
O
C
2.4V ~ 5.5V
n
CAPACITANCE
(1)
(T
A
= 25
O
C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
C
IN
Input
Capacitance
Input/Output
Capacitance
V
IN
= 0V
10
pF
C
IO
V
I/O
= 0V
12
pF
1. This parameter is guaranteed and not 100% tested.
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| BS62LV1600EI55 | Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EI70 | Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIG55 | Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIG70 | Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIP55 | Very Low Power CMOS SRAM 2M X 8 bit |
相關(guān)代理商/技術(shù)參數(shù) |
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| BS62LV1600EI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
| BS62LV1600EI55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EI70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIG55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit |
| BS62LV1600EIG70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit |
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