參數(shù)資料
型號： BD240B
廠商： Transys Electronics Ltd.
英文描述： PNP SILICON POWER TRANSISTORS
中文描述： 進(jìn)步黨硅功率晶體管
文件頁數(shù)： 2/6頁
文件大?。?/td> 86K
代理商： BD240B
BD240, BD240A, BD240B, BD240C
PNP SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
(see Note 5)
I
B
= 0
BD240
BD240A
BD240B
BD240C
BD240
BD240A
BD240B
BD240C
BD240/240A
BD240B/240C
-45
-60
-80
-100
V
I
CES
Collector-emitter
cut-off current
V
CE
= -55 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -115 V
V
CE
= -30 V
V
CE
= -60 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
mA
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
mA
I
EBO
V
EB
= -5 V
I
C
= 0
-1
μ
A
h
FE
V
CE
= -4 V
V
CE
= -4 V
I
C
= -0.2 A
I
C
= -1
Α
(see Notes 5 and 6)
40
15
V
CE(sat)
I
B
= -0.2 A
I
C
= -1 A
(see Notes 5 and 6)
-0.7
V
V
BE
V
CE
= -4 V
I
C
= -1 A
(see Notes 5 and 6)
-1.3
V
h
fe
V
CE
= -10 V
I
C
= -0.2 A
f = 1 kHz
20
|
h
fe
|
V
CE
= -10 V
I
C
= -0.2 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
4.17
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
t
off
Turn-on time
Turn-off time
I
C
= -200 mA
V
BE(off)
= 3.4 V
I
B(on)
= -20 mA
R
L
= 150
I
B(off)
= 20 mA
t
p
= 20 μs, dc
≤
2%
0.2
0.4
μs
μs
相關(guān)PDF資料
PDF描述
BD240C PNP SILICON POWER TRANSISTORS
BD240A PNP SILICON POWER TRANSISTORS
BD240B PNP SILICON POWER TRANSISTORS
BD240C PNP SILICON POWER TRANSISTORS
BD241D NPN SILICON POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD240B-S 功能描述:兩極晶體管 - BJT 80V 2A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD240BTU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD240C 功能描述:兩極晶體管 - BJT 30W PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD240C 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -100V TO-220
BD240C-S 功能描述:兩極晶體管 - BJT 100V 2A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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