參數(shù)資料
型號: BD240
廠商: Power Innovations International, Inc.
英文描述: PNP SILICON POWER TRANSISTORS
中文描述: 進步黨硅功率晶體管
文件頁數(shù): 3/6頁
文件大?。?/td> 86K
代理商: BD240
3
JUNE 1973 - REVISED MARCH 1997
BD240, BD240A, BD240B, BD240C
PNP SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·01
-0·1
-1·0
h
F
10
100
1000
TCS632AG
T
C
= 25°C
T
C
= 80°C
V
CE
= -4 V
t
p
= 300 μs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
-10
I
B
- Base Current - mA
-0·1
-1·0
-10
-100
-1000
V
C
-0·01
-0·1
-1·0
TCS632AE
I
C
= -100 mA
I
C
= -300 mA
I
C
= -1 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·01
-0·1
-1·0
V
B
-0·5
-0·6
-0·7
-0·8
-0·9
-1·0
TCS632AF
V
CE
= -4 V
T
C
= 25°C
相關(guān)PDF資料
PDF描述
BD240 PNP SILICON POWER TRANSISTORS
BD240A PNP SILICON POWER TRANSISTORS
BD240B PNP SILICON POWER TRANSISTORS
BD240C PNP SILICON POWER TRANSISTORS
BD240A PNP SILICON POWER TRANSISTORS
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