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參數(shù)資料
| 型號： | BD239B |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 86K |
| 代理商： | BD239B |
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 5)
I
B
= 0
BD239
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
BD239/239A
BD239B/239C
45
60
80
100
V
I
CES
Collector-emitter
cut-off current
V
CE
= 55 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 115 V
V
CE
= 30 V
V
CE
= 60 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
0.2
0.2
0.2
0.2
0.3
0.3
mA
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
mA
I
EBO
V
EB
= 5 V
I
C
= 0
1
μ
A
h
FE
V
CE
= 4 V
V
CE
= 4 V
I
C
= 0.2 A
I
C
= 1 A
(see Notes 5 and 6)
40
15
V
CE(sat)
I
B
= 0.2 A
I
C
= 1 A
(see Notes 5 and 6)
0.7
V
V
BE
V
CE
= 4 V
I
C
= 1 A
(see Notes 5 and 6)
1.3
V
h
fe
V
CE
= 10 V
I
C
= 0.2 A
f = 1 kHz
20
|
h
fe
|
V
CE
= 10 V
I
C
= 0.2 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
4.17
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
t
off
Turn-on time
Turn-off time
I
C
= 200 mA
V
BE(off)
= -3.4 V
I
B(on)
= 20 mA
R
L
= 150
I
B(off)
= -20 mA
t
p
= 20 μs, dc
≤
2%
0.3
0.8
μs
μs
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| BD239C | NPN SILICON POWER TRANSISTORS |
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| BD240 | PNP SILICON POWER TRANSISTORS |
| BD240A | PNP SILICON POWER TRANSISTORS |
| BD240B | PNP SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD239B-S | 功能描述:兩極晶體管 - BJT 80V 2A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD239BTU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD239BTU_Q | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD239C | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD239C | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220 |
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