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參數(shù)資料
| 型號： | BAS16VV |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High-speed switching diodes |
| 中文描述： | 高速開關(guān)二極管 |
| 封裝： | BAS16<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BAS16<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BA |
| 文件頁數(shù)： | 6/20頁 |
| 文件大小： | 142K |
| 代理商： | BAS16VV |
BAS16_SER_5
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
6 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB with 60
μ
m copper strip line.
[3]
Reflow soldering is the only recommended soldering method.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[5]
Single diode loaded.
[6]
Soldering point of cathode tab.
[7]
Soldering points at pins 4, 5 and 6.
7.
Characteristics
[1]
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
; measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
[2]
[3]
R
th(j-sp)
thermal resistance from
junction to solder point
BAS16H
BAS16J
BAS16T
BAS16VY
BAS316
BAS516
[6]
-
-
-
-
-
-
-
70
55
350
260
150
120
K/W
K/W
K/W
K/W
K/W
K/W
[6]
-
-
[5][7]
-
[6]
-
[6]
-
Table 7.
Symbol
Thermal characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Table 8.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Per diode
V
F
forward voltage
Characteristics
Conditions
Min
Typ
Max
Unit
[1]
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°
C
V
R
= 80 V; T
j
= 150
°
C
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
1.25
30
0.5
30
50
mV
mV
V
V
nA
μ
A
μ
A
μ
A
I
R
reverse current
C
d
diode capacitance
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
BAS516
reverse recovery time
forward recovery voltage
-
-
1.5
pF
-
-
-
-
1
4
1.75
pF
ns
V
t
rr
V
FR
[2]
-
[3]
-
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參數(shù)描述 |
|---|---|
| BAS16VV T/R | 功能描述:二極管 - 通用，功率，開關(guān) DIODE SW TRIPLE TAPE-7 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS16VV,115 | 功能描述:二極管 - 通用，功率，開關(guān) DIODE SW TRIPLE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS16VV115 | 制造商:NXP Semiconductors 功能描述:DIODE ULTRAFAST 200MA 100V |
| BAS16VV-7 | 功能描述:二極管 - 通用，功率，開關(guān) 1.5pF 4ns Switching 100V Diode Array RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAS16VY | 制造商:NXP Semiconductors 功能描述:DIODE SWITCHING SOT-363 制造商:NXP Semiconductors 功能描述:DIODE, SWITCHING, SOT-363 |
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