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參數(shù)資料
| 型號： | AT28BV64B-20PI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
| 中文描述： | 8K X 8 EEPROM 3V, 200 ns, PDIP28 |
| 封裝： | 0.600 INCH, PLASTIC, MS-011AB, DIP-28 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 254K |
| 代理商： | AT28BV64B-20PI |
AT28BV64B
5
AC Read Waveforms
(1)(2)(3)(4)
Notes:
1. CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
2. OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change
without impact on t
ACC
.
3. t
DF
is specified from OE or CE whichever occurs first (C
L
= 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
Note:
1. This parameter is characterized and is not 100% tested.
AC Read Characteristics
Symbol
Parameter
AT28BV64B-20
AT28BV64B-25
Units
Min
Max
Min
Max
t
ACC
Address to Output Delay
200
250
ns
t
CE
(1)
CE to Output Delay
200
250
ns
t
OE
(2)
OE to Output Delay
0
80
0
100
ns
t
DF
(3)(4)
CE or OE to Output Float
0
55
0
60
ns
t
OH
Output Hold from OE, CE or Address, whichever
occurred first
0
0
ns
t
R
, t
F
< 20 ns
Pin Capacitance
f = 1 MHz, T = 25°C
(1)
Symbol
Typ
Max
Units
Conditions
C
IN
4
6
pF
V
IN
= 0V
C
OUT
8
12
pF
V
OUT
= 0V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28BV64B-20SC | 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
| AT28BV64B-20SI | 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
| AT28BV64B-20TC | 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
| AT28BV64B-20TI | 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
| AT28BV64B-25JC | 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28BV64B-20SA | 功能描述:IC EEPROM 64KBIT 200NS 28SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT28BV64B-20SC | 功能描述:電可擦除可編程只讀存儲器 200NS IND TEMP PKG- 200NS COM TEMP RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28BV64B-20SI | 功能描述:電可擦除可編程只讀存儲器 200NS IND TEMP PKG- 200NS IND TEMP RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28BV64B20SU | 制造商:ATMEL 功能描述:Pb Free |
| AT28BV64B-20SU | 功能描述:電可擦除可編程只讀存儲器 200NS IND TEMP GRN PKG RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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