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參數(shù)資料
| 型號： | ASDN010 |
| 英文描述： | Schottky Diode Array |
| 中文描述： | 肖特基二極管陣列 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 25K |
| 代理商： | ASDN010 |
Schottky Diode Array
ASDN010
ASTEC Semiconductor
3
Electrical Characteristics
Electrical Characteristics are guaranteed over full junction temperature range (0 to 70
°
C). Ambient temperature must be derated based
on power dissipation and package thermal characteristics. The conditions are: V
VDD
= 20V and I
VDD
= 10 mA unless otherwise stated.
Test
Parameter Symbol Condition Min Typ Max Unit
Diode Forward Voltage
V
F
I
F
= 16 mA
I
F
= 50 mA
0.65 0.85 V
0.80 1.00 V
Max. Bus Speed (see note 1)
Z
O
= 50
, Logic Swing 0.4V to 3.0V 125 MHz
Channel leakage I
CL
Input Capacitance
0
≤
V
IN
≤
V
DD
0.1 5.0
μ
A
f = 1 MHz, V
IN
= 2.5V, T
A
= 25
°
C, V
DD
= 5V 5 pF
ESD Protection
MIL-STD-883, Method 3015
2
KV
Note 1: The presence of a Schottky diode for clamping bus overshoots will cause additional delays of signal edges. These delays are
the result of diode characteristics such as forward voltage, diode capacitance and the reverse recovery phenomenon. The ground clamp
diode is most critical, particularly if VLSI circuits such as static or dynamic memories are directly connected to busses without any buffer
stages. The incremental delay observed on a positive edge following a negative transition that forward biased the Schottky diode is less
than 800 pS. That represents less than 10% of the 125 MHz (8 nS period) bus cycle time.
Typical Performance Curves
None available at time of printing
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