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參數(shù)資料
| 型號： | APTM50DHM65T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 299K |
| 代理商： | APTM50DHM65T |
APTM50DHM65T
A
PT
M
50D
H
M
65T
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
500
V
VGS = 0V,VDS= 500V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 400V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25.5A
65
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7000
Coss
Output Capacitance
1400
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
90
pF
Qg
Total gate Charge
140
Qgs
Gate – Source Charge
40
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 51A
70
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
38
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 51A
RG = 3
W
93
ns
Eon
Turn-on Switching Energy
u
1035
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3
845
J
Eon
Turn-on Switching Energy
u
1556
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3
1013
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
60
A
IF = 60A
1.6
1.8
IF = 120A
1.9
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
130
trr
Reverse Recovery Time
IF = 60A
VR = 400V
di/dt = 200A/s
Tj = 125°C
170
ns
Tj = 25°C
220
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt = 200A/s
Tj = 125°C
920
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
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