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參數(shù)資料
| 型號： | APTM120UM95F-ALN |
| 元件分類： | JFETs |
| 英文描述： | 103 A, 1200 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 299K |
| 代理商： | APTM120UM95F-ALN |
APTM120UM95F-AlN
A
P
T
M
120U
M
95F
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 2mA
1200
V
VGS = 0V,VDS = 1200V
Tj = 25°C
0.6
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
3
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 51.5A
95
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 15mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±500
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
30.9
Coss
Output Capacitance
4.6
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.78
nF
Qg
Total gate Charge
1122
Qgs
Gate – Source Charge
144
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 103A
720
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
15
Td(off)
Turn-off Delay Time
160
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 103A
RG =0.8
45
ns
Eon
Turn-on Switching Energy
5.9
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 103A, RG = 0.8
4.1
mJ
Eon
Turn-on Switching Energy
9.4
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 103A, RG = 0.8
5.14
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
103
IS
Continuous Source current
(Body diode)
Tc = 80°C
77
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 103A
1.3
V
dv/dt
Peak Diode Recovery
18
V/ns
Tj = 25°C
320
trr
Reverse Recovery Time
IS = - 103A
VR = 600V
diS/dt = 600A/s
Tj = 125°C
650
ns
Tj = 25°C
12
Qrr
Reverse Recovery Charge
IS = - 103A
VR = 600V
diS/dt = 600A/s
Tj = 125°C
42
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 103A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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