- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄57952 > APTM120UM95F-ALN 103 A, 1200 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APTM120UM95F-ALN |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 103 A, 1200 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 299K |
| 代理商： | APTM120UM95F-ALN |
APTM120UM95F-AlN
A
P
T
M
120U
M
95F
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
D
G
DK
S
SK
D
S
DK
G
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
103
ID
Continuous Drain Current
Tc = 80°C
77
IDM
Pulsed Drain current
412
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
95
m
PD
Maximum Power Dissipation
Tc = 25°C
2272
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1200V
RDSon = 95m max @ Tj = 25°C
ID = 103A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single Switch
MOSFET Power Module
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM20AM05FTG | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM04 | 372 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM04 | 372 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM05 | 317 A, 200 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM05 | 317 A, 200 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM120VDA57T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - MOSFET - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 1200V 17A SP3 |
| APTM20AM04F | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APTM20AM04FG | 功能描述:PWR MODULE MOSFET 200V 372A SP6 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM20AM05F | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Phase leg MOSFET Power Module |
| APTM20AM05FG | 功能描述:MOSFET MODULE PHASE LEG SP6 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。