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參數(shù)資料
| 型號： | APT14050JVFR |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 135K |
| 代理商： | APT14050JVFR |
APT14050JVFR
050-7259
Rev
A
4-2004
DYNAMIC CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 13.61mH, RG = 25, Peak IL = 23A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID23A
di/dt ≤ 700A/s V
R ≤ 1400
T
J ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL/PACKAGECHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.18
40
2500
10
UNIT
°C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = ID -23A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID 23A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID 23A, di/dt = 100A/s)
Peak Recovery Current
(IS = -ID 23A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 700V
ID = 23A @ 25°C
VGS = 15V
VDD = 700V
ID = 23A @ 25°C
RG = 0.6
MIN
TYP
MAX
13500
1150
600
820
55
375
20
18
110
20
UNIT
pF
nC
ns
MIN
TYP
MAX
23
92
1.3
18
Tj = 25°C
300
Tj = 125°C
600
Tj = 25°C
1.8
Tj = 125°C
7.4
Tj = 25°C
16
Tj = 125°C
30
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
tf
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.20
0.16
0.12
0.08
0.04
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
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