
ADG796A
Rev. 0 | Page 5 of 24
VDD = 3 V ± 10%, GND = 0 V, TA = 40°C to +85°C, unless otherwise noted.
Table 2.
Parameter
Conditions
Min
Max
Unit
ANALOG SWITCH
VS = VDD, RL = 1 MΩ
0
2.2
V
VS = VDD, RL = 75 Ω
0
1.7
V
On Resistance, RON
2.2
4
Ω
6
Ω
On Resistance Matching Between Channels, RON
VD = 0 V IDS = 10 mA
0.15
0.6
Ω
VD = 1 V IDS = 10 mA
1.1
Ω
On Resistance Flatness, RFLAT(ON)
VD = 0 V to 1 V, IDS = 10 mA
0.3
2.8
Ω
LEAKAGE CURRENTS
Source Off Leakage (IS(OFF))
±0.25
nA
Drain Off Leakage (ID(OFF))
±0.25
nA
Channel On Leakage (ID(ON), IS(ON))
±0.25
nA
tON, tENABLE
CL = 35 pF, RL = 50 Ω, VS = 2 V, see Figure 24 198
270
ns
tOFF, tDISABLE
CL = 35 pF, RL = 50 Ω, VS = 2 V, see Figure 24 195
260
ns
Break-Before-Make Time Delay, tD
CL = 35 pF, RL = 50 Ω, VS1 = VS2 = 2 V,
1
3
ns
Off Isolation
60
dB
Channel-to-Channel Crosstalk
Same Multiplexer
55
dB
Different Multiplexer
70
dB
3 dB Bandwidth
310
MHz
THD + N
RL = 100 Ω
0.14
%
Charge Injection
2.5
pC
CS(OFF)
10
pF
CD(OFF)
13
pF
CD(ON), CS(ON)
27
pF
Power Supply Rejection Ratio, PSRR
f = 20 kHz
70
dB
Differential Gain Error
CCIR330 test signal
0.28
%
Differential Phase Error
CCIR330 test signal
0.28
Degrees
LOGIC INPUTS (A0, A1,
A2)3Input High Voltage, VINH
2.0
V
Input Low Voltage, VINL
0.8
V
Input Current, IINL or IINH
VIN = 0 V to VDD
0.005
±1
μA
Input Capacitance, CIN
3
pF
Input High Voltage, VINH
0.7 × VDD
VDD + 0.3
V
Input Low Voltage, VINL
0.3
+0.3 × VDD
V
Input Leakage Current, IIN
VIN = 0 V to VDD
+0.005
±1
μA
Input Hysteresis
0.05 × VDD
V
Input Capacitance, CIN
3
pF
SDA Pin
Output Low Voltage, VOL
ISINK = 3 mA
0.4
V
ISINK = 6 mA
0.6
V
Floating State Leakage Current
±1
μA
Floating State Output Capacitance
3
pF