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| 型號： | NCP1607BDR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 4/23頁 |
| 文件大小： | 255K |
| 描述： | IC PFC CONTROLLER CRM 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 模式： | 臨界傳導(dǎo)（CRM） |
| 電流 - 啟動： | 23.5µA |
| 電源電壓： | 9.5 V ~ 20 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 其它名稱： | NCP1607BDR2GOSDKR |
NCP1607
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(For typical values, T
J
= 25癈. For min/max values, T
J
= 40癈 to +125癈, unless otherwise specified,
V
CC
= 12 V, V
FB
= 2.4 V, V
CS
= 0 V, V
CONTROL
= open, V
ZCD
= open, C
DRV
= 1 nF, C
T
= 1 nF)
Characteristics
Symbol
Min
Typ
Max
Unit
V
CC
UNDERVOLTAGE LOCKOUT SECTION
V
CC
Startup Threshold (Undervoltage Lockout Threshold, Vcc rising)
25癈 < T
J
< +125癈
40癈 < T
J
< +125癈
V
CC(on)
11.0
10.9
11.8
11.8
13.0
13.1
V
V
CC
Disable Voltage after Turn On (Undervoltage Lockout Threshold, V
CC
falling)
25癈 < T
J
< +125癈
40癈 < T
J
< +125癈
V
CC(off)
8.7
8.5
9.5
9.5
10.3
10.5
V
Undervoltage Lockout Hysteresis
H
UVLO
2.2
2.5
2.8
V
DEVICE CONSUMPTION
I
CC
consumption during startup: 0 V < V
CC
< V
CC(on)
200 mV
I
CC(startup)
23.5
40
mA
I
CC
consumption after turn on at No Load, 70 kHz switching
I
CC1
1.4
2.0
mA
I
CC
consumption after turn on at 70 kHz switching
I
CC2
2.17
3.0
mA
I
CC
consumption after turn on at no switching
(such as during OVP fault, UVP fault, or grounding ZCD)
I
CC(fault)
1.2
1.6
mA
REGULATION BLOCK (ERROR AMPLIFIER)
Voltage Reference
T
J
= 25 癈
25癈 < T
J
< +125癈
40癈 < T
J
< +125癈
V
REF
2.475
2.465
2.460
2.50
2.50
2.50
2.525
2.535
2.540
V
V
REF
Line Regulation from V
CC(on)
+ 200 mV < V
CC
< 20 V, T
J
= 25癈
V
REF
(line)
2.0
2.0
mV
Error Amplifier Current Capability: (Note 3)
Sink (V
Control
= 4 V, V
FB
= 2.6 V):
Source (V
Control
= 4 V, V
FB
= 2.4 V):
I
EA
8.0
2.0
17
6.0
mA
Error Amplifier Open Loop DC Gain (Note 4)
G
OL
80
dB
Unity Gain Bandwidth (Note 4)
BW
1.0
MHz
FB Bias Current (V
FB
= 2.5 V)
I
FB
0.25
0.53
1.25
mA
FB Pull Down Resistor (V
FB
= 2.5 V)
R
FB
2.0
4.7
10
MW
Control Pin Bias Current (FB = 0 V and V
CONTROL
= 4.0 V)
I
CONTROL
1.0
1.0
mA
V
CONTROL
(I
EASOURCE
= 0.5 mA, V
FB
= 2.4 V)
V
EAH
4.9
5.3
5.7
V
V
CONTROL
(I
EASINK
= 0.5 mA, V
FB
= 2.6 V)
V
EAL
1.85
2.1
2.4
V
V
EA(diff)
= V
EAH
V
EAL
V
EA(diff)
3.0
3.2
3.4
V
CURRENT SENSE BLOCK
Overcurrent Voltage Threshold
V
CS(limit)
0.45
0.5
0.55
V
Leading Edge Blanking Duration
t
LEB
150
256
350
ns
Overcurrent Voltage Propagation Delay
t
CS
40
100
170
ns
CS Bias Current (V
CS
= 2 V)
I
CS
1.0
1.0
mA
ZERO CURRENT DETECTION
Zero Current Detection Threshold (V
ZCD
rising)
V
ZCDH
1.9
2.1
2.3
V
Zero Current Detection Threshold (V
ZCD
falling)
V
ZCDL
1.45
1.6
1.75
V
V
ZCDH
V
ZCDL
V
ZCD(HYS)
300
500
800
mV
Maximum ZCD bias Current (V
ZCD
= 5 V)
I
ZCD
2.0
+2.0
mA
Upper Clamp Voltage (I
ZCD
= 2.5 mA)
V
CL(POS)
5.0
5.7
6.5
V
Current Capability of the Positive Clamp at V
ZCD
= V
CL(POS)
+ 200 mV:
I
CL(POS)
5.0
8.5
mA
Negative Active Clamp Voltage (I
ZCD
= 2.5 mA)
V
CL(NEG)
0.45
0.6
0.75
V
3. Parameter values are valid for transient conditions only.
4. Parameter characterized and guaranteed by design, but not tested in production.
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