參數(shù)資料
型號(hào): FDFS2P103A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Integrated P-Channel PowerTrench MOSFET and Schottky Diode
中文描述: 5.3 A, 30 V, 0.059 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 144K
代理商: FDFS2P103A
FDFS2P103A Rev C (W)
Typical Characteristics
0
2
4
6
8
10
0
2
4
Q
g
, GATE CHARGE (nC)
6
8
10
12
-
G
,
I
D
= -5.3A
V
DS
= -10V
-15V
-20V
0
200
400
600
800
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
V
F
, FORWARD VOLTAGE (V)
I
F
,
T
J
= 25
o
C
T
J
= 125
o
C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
0
5
10
15
20
25
30
V
R
, REVERSE VOLTAGE (V)
I
R
,
T
J
= 25
o
C
T
J
= 125
o
C
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 135 °C/W
T
J
- T
A
t
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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