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參數(shù)資料
| 型號(hào)： | 5962H0521404VXA |
| 元件分類： | XO, clock |
| 英文描述： | 200 MHz, OTHER CLOCK GENERATOR, CDFP48 |
| 封裝： | CERAMIC, DFP-48 |
| 文件頁數(shù)： | 20/22頁 |
| 文件大?。?/td> | 174K |
| 代理商： | 5962H0521404VXA |
7
3.0 PIN DESCRIPTION
Flatpack
Pin No.
Name
I/O
Type
Description
37
XTAL1
I
LVTTL
Primary reference clock input.
When interfacing a single-ended reference clock
to the UT7R995 or UT7R995C, this input must be driven by an LVTTL/LVCMOS
clock source.
If a quartz crystal is used as the reference clock source (UT7R995C only), the second
pin on the crystal must be connected to XTAL2. If a singled ended reference clock
is supplied to this pin, then XTAL2 should be left unconnected.
36
N/C
--
No Connect.
UT7R995 Only.
XTAL2
O
N/A
Feedback output from the on-board crystal oscillator.
When a crystal is used to
supply the reference clock for the UT7R995C, this pin must be connected to the
second terminal of the quartz crystal. If a single-ended reference clock is supplied
to XTAL1, then this output should be left unconnected.
13
FB
I
LVTTL
Feedback input for the PLL.
When FB is not driven by an active clock output the
PLL will run to its maximum frequency, unless the device is placed in power-down.
28
TEST 1
I
3-Level
Built-in test control signal.
When Test is set to the MID or HIGH level, it disables
the PLL and the XTAL1 reference frequency is driven to all outputs (except for the
conditions described in note 1). Set Test LOW for normal operation.
2.0 OPEATIONAL ENVIRONMENT
Table 13: Operational Environment
Notes:
1. The UT7R995/C are latchup immune to particle LETs >109 MeV-cm2/mg.
2. Worst case temperature and voltage of TC = +125
oC, V
DD = 3.6V, VDDQ1/Q3/Q4 = 3.6V for SEL.
3. Worst case temperature and voltage of TC = +25
oC, V
DD = 3.0V, VDDQ1/Q3/Q4 = 3.0V for SEU.
4. All SEU data specified in this datasheet is based on the storage elements used in the UT7R995/C.
5. For characterization data on the UT7R995/C SET performance over allowable operating ranges, please contact the factory.
Parameter
Limit
Units
Total Ionizing Dose (TID)
>1E6
rads(Si)
Single Event Latchup (SEL) 1, 2
>109
MeV-cm2/mg
Onset Single Event Upset (SEU) LET Threshold 3, 4
>109
MeV-cm2/mg
Onset Single Event Transient (SET) LET Threshold (@ 50MHz; FS=L)5
>74
MeV-cm2/mg
Neutron Fluence
1.0E14
n/cm2
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