參數(shù)資料
型號(hào): 2SK3653C
元件分類: 小信號(hào)晶體管
英文描述: 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: 0814, SOF-3
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 217K
代理商: 2SK3653C
2SK2606
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 640 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
800
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
1.0
1.2
Forward transfer admittance
|Yfs|
VDS = 15 V, ID = 4 A
3.0
7.0
S
Input capacitance
Ciss
2160
Reverse transfer capacitance
Crss
45
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
200
pF
Rise time
tr
25
Turnon time
ton
60
Fall time
tf
25
Switching time
Turnoff time
toff
110
ns
Total gate charge (gatesource
plus gatedrain)
Qg
68
Gatesource charge
Qgs
38
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 8 A
30
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
8
A
Pulse drain reverse current
(Note 1)
IDRP
24
A
Forward voltage (diode)
VDSF
IDR = 8 A, VGS = 0 V
1.9
V
Reverse recovery time
trr
1500
ns
Reverse recovery charge
Qrr
IDR = 8 A, VGS = 0 V, dIDR / dt = 100 A / μs
19
μC
Marking
K2606
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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