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參數(shù)資料
| 型號： | 2SK3466 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 175K |
| 代理商： | 2SK3466 |
2SK3466
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Drain cut-OFF current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
1.35
1.50
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5 A
2.5
4.0
S
Input capacitance
Ciss
780
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
200
pF
Rise time
tr
12
Turn-ON time
ton
25
Fall time
tf
15
Switching time
Turn-OFF time
toff
60
ns
Total gate charge
(gate-source plus gate-drain)
Qg
17
Gate-source charge
Qgs
11
Gate-drain (“miller”) charge
Qgd
VDD 400 V, VGS = 10 V, ID = 5 A
6
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDSF
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1400
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
9
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K3466
Lot No.
Note 4
Part No. (or abbreviation code)
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 90 Ω
VDD 225 V
ID = 2.5 A
Output
15
Ω
相關(guān)PDF資料 |
PDF描述 |
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| 2SK3466 | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3481-S-AZ | 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3481-S | 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3481-ZJ-AZ | 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3481-AZ | 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3466(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A SC-97 |
| 2SK3466_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator Applications |
| 2SK3466_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator Applications |
| 2SK3467 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3467-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
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