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參數(shù)資料
| 型號： | 2SK3408 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 43 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-96, MINI MOLD PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 62K |
| 代理商： | 2SK3408 |
Data Sheet D15016EJ4V0DS
2
2SK3408
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30.4 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |VDS = 10 V, ID = 0.5 A1.0
2.0
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 0.5 A
155
195
m
RDS(on)2
VGS = 4.5 V, ID = 0.5 A
185
250
m
RDS(on)3
VGS = 4.0 V, ID = 0.5 A
195
260
m
Input Capacitance
Ciss
VDS = 10 V
230
pF
Output Capacitance
Coss
VGS = 0 V50
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
30
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 0.5 A18
ns
Rise Time
tr
VGS = 10 V14
ns
Turn-off Delay Time
td(off)
RG = 10
115
ns
Fall Time
tf
38
ns
Total Gate Charge
QG
VDD = 30.4 V4.0
nC
Gate to Source Charge
QGS
VGS = 10 V1.0
nC
Gate to Drain Charge
QGD
ID = 1.0 A1.0
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 1.0 A, VGS = 0 V0.81
V
Reverse Recovery Time
trr
IF = 1.0 A, VGS = 0 V25
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
s16
nC
Note Pulsed: PW
≤ 350
s, Duty Cycle ≤ 2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
5
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| 2SK3408-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 48V 1A 3-Pin SC-96 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,43V,1.0A,0.155ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET N-CH 48V 1A 3-Pin SC-96 T/R |
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