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參數(shù)資料
| 型號(hào)： | 2SK3403(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 281K |
| 代理商： | 2SK3403(2-10S1B) |
2SK3403
2009-09-29
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = 10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 450 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 6 A
0.29
0.4
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 6 A
3.0
5.8
S
Input capacitance
Ciss
1600
Reverse transfer capacitance
Crss
17
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
220
pF
Rise time
tr
28
Turn-on time
ton
45
Fall time
tf
10
Switching time
Turn-off time
toff
56
ns
Total gate charge
Qg
34
Gate-source charge
Qgs
19
Gate-drain charge
Qgd
VDD 360 V, VGS = 10 V, ID = 13 A
15
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
13
A
Pulse drain reverse current
(Note 1)
IDRP
52
A
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
300
ns
Reverse recovery charge
Qrr
IDR = 13 A, VGS = 0 V,
dIDR/dt = 100 A/μs
3.4
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K3403
Part No. (or abbreviation code)
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL =
33.3
Ω
VDD 200 V
ID = 6 A
Output
10
Ω
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