參數(shù)資料
型號(hào)： 2SK2730-E
元件分類： JFETs
英文描述： 25 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SC-65, TO-3P, 3 PIN
文件頁數(shù)： 6/10頁
文件大小： 211K
代理商： 2SK2730-E
2SK2730
Rev.3.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS
(V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage
VGS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS(on)
(V)
Drain Current
ID (A)
Drain
to
Source
On
State
Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
200
150
100
50
0
50
100
150
200
500
200
100
20
50
10
2
5
1
0.5
13
10
30
100
300
1000
50
40
30
20
10
0
10
20
30
40
50
40
30
20
10
0
24
68
10
0.2
0.1
0.05
10
s
100
s
1 ms
PW
=
10
ms
(1shot)
DC
Operati
on
(Tc
=
25
°C)
Ta = 25
°C
5 V
10 V
VGS = 4.5 V
6 V
8 V
6.5 V
5.5 V
Tc = 75
°C
25
°C
–25
°C
Operation in
this area is
limited by RDS(on)
Pulse Test
VDS = 10 V
Pulse Test
10
8
6
4
2
0
48
12
16
20
1
5
20
100
210
50
2
1
0.5
0.2
0.1
ID = 25 A
20 A
10 A
5 A
VGS = 10 V
15 V
Pulse Test
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