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參數(shù)資料
| 型號(hào)： | 2SK2730-E |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 211K |
| 代理商： | 2SK2730-E |
2SK2730
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
25
A
Drain peak current
ID(pulse)*
1
100
A
Body to drain diode reverse drain current
IDR
25
A
Avalanche current
IAP*
3
25
A
Avalanche energy
EAR*
3
35
mJ
Channel dissipation
Pch*
2
175
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.5
—
3.5
V
ID = 1 mA, VDS = 10 V*
4
Static drain to source on state
resistance
RDS(on)
—
0.2
0.24
ID = 15 A, VGS = 10 V*
4
Forward transfer admittance
|yfs|
12
20
—
S
ID = 15 A, VDS = 10 V*
4
Input capacitance
Ciss
—
3500
—
pF
Output capacitance
Coss
—
1000
—
pF
Reverse transfer capacitance
Crss
—
150
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge
Qg
—
65
—
nc
Gate to source charge
Qgs
—
16
—
nc
Gate to drain charge
Qgd
—
24
—
nc
VDD = 400 V, VGS = 10 V,
ID = 25 A
Turn-on delay time
td(on)
—
50
—
ns
Rise time
tr
—
140
—
ns
Turn-off delay time
td(off)
—
200
—
ns
Fall time
tf
—
110
—
ns
VGS = 10 V, ID = 15 A,
RL = 2
Body to drain diode forward voltage
VDF
—
1.1
—
V
ID = 25 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
450
—
ns
IF = 25 A, VGS = 0
diF/ dt = 100A/
s
Note:
4. Pulse test
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