參數(shù)資料
型號(hào)： 2SK1869(L)
元件分類(lèi)： JFETs
英文描述： 0.8 ohm, POWER, FET
封裝： LDPAK-3
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 38K
代理商： 2SK1869(L)
2SK1869(L), 2SK1869(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
350
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS =280 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.6
0.8
I
D = 4 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
3.0
5.0
—
S
I
D = 4 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
635
—
pF
V
DS = 10 V
Output capacitance
Coss
—
230
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
40
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
10
—
ns
I
D = 4 A
Rise time
t
r
—
50
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
60
—
ns
R
L = 7.5
Fall time
t
f
—40—ns
Body to drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 7 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
240
—
ns
I
F = 7 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristic curves of 2SK1400A
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PDF描述
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